222021-10
基于高性能小型PQFN封装，芯能半导体最新推出了4A/600V半桥IPM产品XNS04H54D6。将有助于进一步实现高速风筒和风机等产品的低功耗、小型化及轻量化。芯能在隔离封装中提供了一种非常紧凑、高性能的半桥拓扑。将Trench..
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072021-09
2021年9月6日，芯能完成C轮过亿元融资资金交割。C轮融资由元禾重元、飞图资本联合投资，老股东方广资本和深圳高新投持续加注。
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142021-08
通过持续不断的产品研发投入，芯能半导体首批基于12英寸Field-Stop Trench IGBT芯片正式下线。此次芯片的成功下线，为芯能后续的产能提升开拓出新的方向。
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192021-07
深圳芯能半导体技术有限公司联合深圳市金威源科技股份有限公司成立“金威源科技-芯能半导体联合应用实验室”，揭牌仪式同时隆重举行。
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232021-02
我们提供一种集成电源+功率模组的应用方案，体积小，功能齐全的应用方案。该方案集成IPM、整流桥、母线电压采样电路、相电压采样电路、电流采样、预充电路、继电器输出、电源电路。
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052021-01
2020年12月30日，芯能完成B轮和B+轮近亿元战略融资全部交割。B轮融资由老股东猎鹰投资携手劲邦资本和冠亨投资联合投资。B+轮融资由美的资本独家投资。
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092020-11
2020年11月6日，“2020先进材料与芯片技术学术研讨会暨学科建设研讨会”在深圳技术大学开幕。深圳技术大学校长阮双琛，副主任徐刚；中国工程院院士、广东省科协副主席周克崧，中国工程院院士、深圳大学微纳光电子研..
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182020-09
“在不同的应用场景下，电力转换设备中对功率器件特性需求有差异。在一些电源类领域中，需要提高载波频率来提升整个系统的性能及优势，此时对功率器件的动态性能有较高要求；一些电机驱动领域中，一定的载波频率足够..
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292020-04
2020年4月29日，中国航天国际控股有限公司董事局主席刘眉玄主席一行来到芯能半导体参观指导。芯能半导体总经理刘杰和芯能全体同事对刘主席一行的到访表示热烈欢迎。双方就国内功率半导体行业的发展和趋势、以及芯能..
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132019-10
国庆、重阳刚过，节日气氛未褪，芯能的MM们乘兴组织了一场说走就走的团建活动，地处南海之滨，亲海之旅是顺利成章的选择。云海深处有山庄大部队浩浩荡荡开赴云海山庄，一路畅谈大鹏半岛日新月异的变化。搭乘特区号快..
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182019-06
From June 14th to June 16th, 2019, Core Energy Semiconductor joined hands with Core Electronics to participate
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312019-05
Is the module solution costly? Is the single tube design complicated? Is the heat dissipation problem tricky? Insulation cloth is easy to age? Ceramic insulation sheets are easy to break?
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032019-12
The production process and technology of silicon carbide (SiC) devices have become increasingly mature, and the biggest obstacle to market promotion is cost.
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032019-12
Since the working state of the power electronic device has four working states: on, on state, off state, and off state, the interrupt state and the on state are respectively subjected to high voltage and large current
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032019-12
the need to reduce costs. Taking two points as an example, directly purchasing the finished module of SEMIKRON and other manufacturers can improve the stability of the product
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032019-12
Due to the trade-off between UCE (sat) and short-circuit tolerance of IGBT, it is recommended to select the gate voltage as +UG=15V±10%,—UG =5~10V.
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032018-12
The gate of this shape forms a JFET structure as previously described, as well as a weak conductance modulation effect in the emitter region. For planar gate IGBTs, the concentration of carriers gradually decreases from collector to emitter.
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032018-12
Support household induction cooker for 2100w high power applications
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182019-06
芯能半导体携手有芯电子参加在深圳·会展中心举办的2019第二届深圳国际半导体展览会。
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312019-05
——导热率高、加工更简单模块方案成本高？单管方案设计复杂？散热问题棘手？绝缘布易老化？陶瓷绝缘片容易碎？做电机驱动的各位朋友想必都体会过以上的烦恼。随着市场竞争的逐步加剧，在电机驱动器市场单管方案也越..
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212019-01
Xiner IGBT Discretes products are available in the following package formats: TO-252, TO-263, TO-264, TO-220, TO-220F, TO-263, TO-247, TO-3P, IITO-3P, etc.
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212019-01
Xiner IGBT module, PIM,C1,C2,C3,C4,C5,L1,L2,and other exterior models.
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212019-01
芯能IGBT单管产品现有封装形式包括：TO-252,TO-263,TO-264,TO-220,TO-220F,TO-263,TO-247,TO-3P,IITO-3P等
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212019-01
芯能IGBT模块，PIM,拥有C1,C2,C3,C4,C5,L1,L2等几种外型型号产品。
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